Critical Thickness of ZnTe on GaSb(211)B

被引：0
作者：
J. Chai
O. C. Noriega
J. H. Dinan
T. H. Myers
机构：
[1] Texas State University-San Marcos,Material Science, Engineering, and Commercialization Program
[2] Texas State University-San Marcos,Physics Department
来源：
Journal of Electronic Materials | 2012年 / 41卷
关键词：
ZnTe; GaSb; molecular beam epitaxy; critical thickness; x-ray diffraction; photoluminescence;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
An important parameter for heteroepitaxial material systems is the critical thickness hc. To date, for the material system ZnTe on GaSb, agreement between experimental and theoretical values of hc has been poor. In this paper, we present results of an experimental study of hc for ZnTe layers on GaSb(211)B substrates based on a combination of high-resolution x-ray diffraction and photoluminescence measurements. Our experimentally determined hc value of 350 nm to 375 nm agrees well with the models of Cohen-Solal and Dunstan.
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页码：3001 / 3006
页数：5
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