Interaction of InAs and InSb with aqueous solutions of nitric acid

被引：0

作者：

Z. F. Tomashik

S. G. Danilenko

V. N. Tomashik

N. V. Kusyak

机构：

[1] National Academy of Sciences of Ukraine,Institute of Semiconductor Physics

来源：

Inorganic Materials | 2000年 / 36卷

关键词：

Arsenic; Nitric Acid; Dissolution Rate; InSb; Dissolution Kinetic;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

InSb dissolution in 7.8–15.6 N HNO3 is controlled by the oxidizer diffusion to the surface. InAs dissolution in 15.6 N HNO3 is controlled by diffusion in solution; at low acid concentrations, the dissolution rate is limited by diffusion through the loose oxide layer forming on the sample surface. The different dissolution kinetics of InAs and InSb in HNO3 can be explained by the different properties of the surface layers of hydrous arsenic and antimony oxides.

引用

页码：105 / 107

页数：2

共 9 条

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[5]

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