MBE growth of ultrathin III–V nanowires on a highly mismatched SiC/Si(111) substrate

被引:0
作者
R. R. Reznik
K. P. Kotlyar
I. V. Shtrom
I. P. Soshnikov
S. A. Kukushkin
A. V. Osipov
G. E. Cirlin
机构
[1] Russian Academy of Sciences,St. Petersburg Academic University
[2] ITMO University,Institute for Analytical Instrumentation
[3] Russian Academy of Sciences,Institute of Problems of Mechanical Engineering
[4] Peter the Great St. Petersburg Polytechnic University,undefined
[5] Russian Academy of Science,undefined
[6] Ioffe Institute,undefined
来源
Semiconductors | 2017年 / 51卷
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摘要
The possibility in principle of growing III–V GaAs, AlGaAs, and InAs nanowires (NWs) on a silicon substrate with a nanometer buffer layer of silicon carbide is demonstrated for the first time. The diameter of these NWs is smaller than that of similar NWs grown on a silicon substrate. In particular, the minimum diameter is less than 10 nm for InAs NWs. In addition, it was assumed on the basis of photoluminescence measurements that, when AlGaAs NWs are grown on these substrates, a complex structure is formed due to the self-organized formation of AlGaAs quantum dots with a lower content of aluminum, embedded in the NWs.
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页码:1472 / 1476
页数:4
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