Preparation of Pb(Mg1/3Nb2/3)O3-PbTiO3 thin films by MOCVD using ultrasonic nebulization

Thin films of Pb(Mg1/3,Nb2/3)O3 (PMN) and Pb(Mg1/3,Nb2/3)O3-PbTiO3 (PMN-PT) were fabricated on Si and Pt/Ti/SiO2/Si substrates by MOCVD using ultrasonic nebulization and their characteristics were investigated. PMN-PT films deposited at 350∘C were annealed in a RTA (Rapid Thermal Annealing) system at 650∘C for 30 sec to improve the micostructural properties. The crystallographic properties of PMN-PT films strongly depend on the content ratio of PbTiO3. The content of pyrochlore phase in PMN-PT films decreased with the increase of Ti content and nearly single phase perovskite films were obtained at the composition of 80PMN-20PT. The PMN-PT films with perovskite phase showed a typical butterfly type C-V curve which verifies the ferroelectricity and had the relative dielectric constant of about 60.