Design and implementation of a 1–5 GHz UWB low noise amplifier in 0.18 μm CMOS

被引：0
作者：
Ming Shen
Tian Tong
Jan H. Mikkelsen
Ole K. Jensen
Torben Larsen
机构：
[1] Aalborg University,Technology Platforms Section, Department of Electronic Systems
来源：
Analog Integrated Circuits and Signal Processing | 2011年 / 67卷
关键词：
Ultra-wideband; Low noise amplifier; CMOS;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
This paper presents a compact two-stage ultra-wideband low-noise amplifier (LNA). A common-gate topology is adopted for the input stage to achieve wideband input matching, while a cascode stage is used as the second stage to provide power gain at high frequencies. A low power consumption and a small chip area are obtained by optimizing the performance of the LNA with tight constraint on biasing current and reducing the number of inductors to two. The LNA has been fabricated in a standard 0.18 μm CMOS technology for experimental verification. The LNA achieves a power gain of 11–13.7 dB and a noise figure of 5.0–6.5 dB in the frequency band 1-5 GHz. The measured third order (two-tone) input intercept point (IIP3) is −9.8 dBm at 4 GHz. The LNA consumes 9 mW with a 1.8 V supply, and it occupies an area of 0.78 mm2.
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页码：41 / 48
页数：7
相关论文
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