Transport of hydrogen in the films made of metals, semiconductors, and dielectrics

We study the process of penetration of hydrogen through the films made of simple metals, semimetals, semiconductors, and dielectrics and analyze the relationships between the parameters used to describe the adsorption and transport of hydrogen in these materials and their electronic structure. It is shown that the density of electron states on the Fermi level is the main factor specifying the activation energy and heat of chemisorption of hydrogen on solid metals. The titanium-nitride films prove to be the most efficient protective coatings.