Transport of hydrogen in the films made of metals, semiconductors, and dielectrics

被引：0
|
作者：
E. A. Denisov
A. A. Kurdyumov
T. N. Kompaniets
机构：
[1] St. Petersburg State University,Fock Scientific
来源：
Materials Science | 2007年 / 43卷
关键词：
Fermi Level; Beryllium; Glow Discharge; Hydrogen Transfer; Titanium Nitride;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
We study the process of penetration of hydrogen through the films made of simple metals, semimetals, semiconductors, and dielectrics and analyze the relationships between the parameters used to describe the adsorption and transport of hydrogen in these materials and their electronic structure. It is shown that the density of electron states on the Fermi level is the main factor specifying the activation energy and heat of chemisorption of hydrogen on solid metals. The titanium-nitride films prove to be the most efficient protective coatings.
引用
收藏
页码：634 / 645
页数：11
相关论文
共 41 条
  • [31] Magnetic and spin-dependent transport properties of reactive sputtered epitaxial Ti1-xCrxN films
    Duan, X. F.
    Mi, W. B.
    Guo, Z. B.
    Bai, H. L.
    ACTA MATERIALIA, 2012, 60 (09) : 3690 - 3697
  • [32] Conductive-atomic force microscopy study of local electron transport in nanostructured titanium nitride thin films
    Vasu, K.
    Krishna, M. Ghanashyam
    Padmanabhan, K. A.
    THIN SOLID FILMS, 2011, 519 (22) : 7702 - 7706
  • [33] Considerations on hydrogen isotopes release from thin films by laser induced ablation and laser induced desorption techniques
    Yehia-Alexe, Sasa-Alexandra
    Groza, Andreea
    Serbanescu, Mihai
    Zarif, Maria Elena
    Bita, Bogdan
    Dinca, Paul
    Butoi, Bogdan
    Staicu, Cornel
    Porosnicu, Corneliu
    SPECTROCHIMICA ACTA PART B-ATOMIC SPECTROSCOPY, 2023, 208
  • [34] Hopping ε2 conductivity of boron-doped a-Si:H films annealed in hydrogen at high temperature
    I. P. Zvyagin
    I. A. Kurova
    M. A. Nal’gieva
    N. N. Ormont
    Semiconductors, 2006, 40 : 108 - 112
  • [35] Oxygen Defects Containing TiN Films for the Hydrogen Evolution Reaction: A Robust Thin-Film Electrocatalyst with Outstanding Performance
    Laghrissi, Ayoub
    Es-Souni, Mohammed
    NANOMATERIALS, 2024, 14 (09)
  • [36] Water:: The ideal hydrogen-atom source in free-radical chemistry mediated by TiIII and other single-electron-transfer metals?
    Cuerva, Juan M.
    Campana, Araceli G.
    Justicia, Jose
    Rosales, Antonio
    Oller-Lopez, Juan L.
    Robles, Rafael
    Cardenas, Diego J.
    Bunuel, Elena
    Oltra, J. Enrique
    ANGEWANDTE CHEMIE-INTERNATIONAL EDITION, 2006, 45 (33) : 5522 - 5526
  • [37] Structural characterization of the interface structure of amorphous silicon thin films after post-deposition argon or hydrogen plasma treatment
    Neumueller, Alex
    Sergeev, Oleg
    Vehse, Martin
    Agert, Carsten
    APPLIED SURFACE SCIENCE, 2017, 403 : 200 - 205
  • [38] Investigations on phosphorus doped amorphous/nanocrystalline silicon films deposited by a filtered cathodic vacuum arc technique in the presence of hydrogen gas
    Kesarwani, A. K.
    Panwar, O. S.
    Tripathi, R. K.
    Dalai, M. K.
    Chockalingam, Sreekumar
    MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2015, 31 : 1 - 9
  • [39] GROWTH-MECHANISM OF ZNS-MN FILMS OBTAINED BY HYDROGEN PLASMA SPUTTERING AND ITS APPLICATION TO A THIN-FILM ELECTROLUMINESCENT DEVICE
    SAKAMA, H
    OHMURA, M
    TONOUCHI, M
    MIYASATO, T
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1993, 32 (04): : 1681 - 1690
  • [40] The kinetics of hydrogen transport through amorphous Pd82-yNiySi18 alloys (y=0-32) by analysis of anodic current transient
    Lee, JW
    Pyun, SI
    Filipek, S
    ELECTROCHIMICA ACTA, 2003, 48 (11) : 1603 - 1611
12345