Transport of hydrogen in the films made of metals, semiconductors, and dielectrics

被引：0
|
作者：
E. A. Denisov
A. A. Kurdyumov
T. N. Kompaniets
机构：
[1] St. Petersburg State University,Fock Scientific
来源：
Materials Science | 2007年 / 43卷
关键词：
Fermi Level; Beryllium; Glow Discharge; Hydrogen Transfer; Titanium Nitride;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
We study the process of penetration of hydrogen through the films made of simple metals, semimetals, semiconductors, and dielectrics and analyze the relationships between the parameters used to describe the adsorption and transport of hydrogen in these materials and their electronic structure. It is shown that the density of electron states on the Fermi level is the main factor specifying the activation energy and heat of chemisorption of hydrogen on solid metals. The titanium-nitride films prove to be the most efficient protective coatings.
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页码：634 / 645
页数：11
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