Exciton states in InGaAsP/InP core–shell quantum dots under an external electric field

被引：1

作者：

Min Hu

Hailong Wang

Qian Gong

Shumin Wang

机构：

[1] Qufu Normal University,School of Physics and Physical Engineering, Shandong Provincial Key Laboratory of Laser Polarization and Information Technology

[2] Chinese Academy of Sciences,State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology

来源：

Journal of Computational Electronics | 2019年 / 18卷

关键词：

Core–shell quantum dot; Exciton binding energy; Electric field;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

The effect of an external electric field on the exciton states of InGaAsP/InP core–shell quantum dots is investigated through the variational method. The effect of the shell thickness, core radius, electric field strength, and material components on the exciton states are analyzed in detail. The numerical results show that the electron and hole energies decrease as the shell thickness or core radius is increased. The Bohr radius is a nonmonotonic function of the shell thickness or core radius, and the change of the exciton binding energy is nonlinear as the shell thickness or core radius is increased. With increasing electric field strength, the Bohr radius increases while the exciton binding energy decreases. The exciton binding energy decreases (increases) as the Ga (As) component is increased.

引用

页码：1243 / 1250

页数：7

共 115 条

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