Electrochemical deposition of Bi2Te3 for thermoelectric microdevices

被引：0
|
作者：
Kerstin Tittes
Andreas Bund
Waldfried Plieth
Anders Bentien
Silke Paschen
Matthias Plötner
Hartmut Gräfe
Wolf-Joachim Fischer
机构：
[1] Technische Universitaet Dresden,Institute of Physical Chemistry and Electrochemistry
[2] Max Planck Institute for Chemical Physics of Solids,Semiconductor Technology and Microsystems Laboratory
[3] Technische Universitaet Dresden,undefined
来源：
Journal of Solid State Electrochemistry | 2003年 / 7卷
关键词：
Bismuth telluride films; Cyclic voltammetry; Electrodeposition; Thermoelectric battery; Thermoelectric sensor;
D O I：
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中图分类号：
学科分类号：
摘要：
The electrolyses of solutions of bismuth oxide and tellurium oxide in nitric acid with molar ratios of Bi:Te=3:3–4:3 lead to cathodic deposits of films of bismuth telluride (Bi2Te3), an n-type semiconductor. Current densities of 2–5 mA/cm2 were applied. Voltammetric investigations showed that Bi2Te3 deposition occurred at potentials more negative than −0.125 V (Ag/AgCl, 3 M KCl). The deposit was identified as bismuth telluride (γ-phase) by X-ray analysis. Hall-effect measurements verified the n-type semiconducting behaviour. The films can be deposited in microstructures for thermoelectric microdevices like thermoelectric batteries or thermoelectric sensors.
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页码：714 / 723
页数：9
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