Microstructural, Optical, and Electrical Properties of Sb2Se3 Films Fabricated by the CMBD Method for Solar Cells

被引：1

作者：

Razykov T.M. ^{[1
]}

Kuchkarov K.M. ^{[1
]}

Ergashev B.A. ^{[1
]}

Tursunkulov O.M. ^{[1
]}

Olimov A. ^{[1
]}

Isakov D. ^{[1
]}

Makhmudov M. ^{[1
]}

Pirimmatov M. ^{[1
]}

机构：

[1] Physical-Technical Institute SPA Physics–Sun, Academy of Sciences of the Republic of Uzbekistan, Tashkent

来源：

Applied Solar Energy (English translation of Geliotekhnika) | 2022年 / 58卷 / 01期

关键词：

absorption coefficient; CMBD; electrical conductivity; morphology; Sb[!sub]2[!/sub]Se[!sub]3[!/sub; structure; temperature; thin films; X-ray pattern;

D O I：

10.3103/S0003701X22010157

中图分类号：

学科分类号：

摘要：

Abstract—: High-quality crystalline Sb2Se3 films are fabricated by the chemical molecular beam deposition (CMBD) method from separate sources of Sb2Se3 binary compound and Se element, at a substrate temperature of 500°C. The effect of temperature of the selenium source on the morphological, structural, optical, and electrical properties of Sb2Se3 films has been studied. Based on the scanning electron microscope images and XRD analysis data, it is revealed that all films have a polycrystalline orthorhombic structure, and the crystallite sizes are 5–10 μm. The electrical conductivities of the films vary within 1.03 × 10–5 to 4.13 × 10–5 (Ω cm)–1 depending on the ratio of Sb/Se atomic concentration. These results determine the growth of high-quality Sb2Se3 thin films from separate sources of the Sb2Se3 binary compound and the Se element at a substrate temperature of 500°C and are the main factors for obtaining efficient solar cells based on Sb2Se3 using the CMBD method. © 2022, Allerton Press, Inc.

引用

页码：21 / 27

页数：6

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