Mechanism of GaAs transport by water reaction application to the growth of thick epitaxial layers

被引：0

作者：

M. Hammadi

J. C. Bourgoin

H. Samic

机构：

[1] Universite´ Pierre et Marie Curie,Laboratoire des Milieux De´sordonne´s et He´te´roge`nes

[2] C.N.R.S.,Department of Physics

[3] UMR 7603,undefined

[4] Tour 22,undefined

[5] Case 86,undefined

[6] University of Sarajevo,undefined

来源：

Journal of Materials Science: Materials in Electronics | 1999年 / 10卷

关键词：

Growth Rate; GaAs; Electronic Material; High Power; Electronic Property;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

We study in detail the decomposition of GaAs by water, and show that the growth technique of epitaxial layers based on this reaction can lead to growth rates reaching several μm per minute. This opens an economical access to the production of semi-insulating and thick epitaxial layers. We briefly mention that these layers can exhibit electronic properties allowing their use in various fields such as high power electronics, photodetection and micro-electronics (production of very homogeneous semi-insulating layers).

引用

页码：399 / 402

页数：3

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