Direct bonding with on-wafer metal interconnections

被引:0
作者
C. Jia
M. Wiemer
T. Gessner
机构
[1] Fraunhofer Institute of Reliability and Micro Integration,Department of Micro Devices and Equipment
[2] Chemnitz University of Technology,Center for Microtechnologies
来源
Microsystem Technologies | 2006年 / 12卷
关键词
Chemical Mechanical Polishing; Plasma Enhance Chemical Vapor Deposition; Direct Bonding; Micro Electro Mechanical System; Glass Wafer;
D O I
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中图分类号
学科分类号
摘要
A low temperature direct bonding process with encapsulated metal interconnections was proposed. The process can be realized between silicon wafers or silicon and glass wafers. To establish well-insulated electric connection, sputtered aluminum film was patterned between a bottom thermal SiO2 and a top PE-SiO2; the consequential uneven wafer surface was planarized through a chemical mechanical polishing (CMP) step. Benefit from this smooth surface finish, direct bonding is achieved at room temperature, and a general yielding rate of more than 95% is obtained. Test results confirmed the reliability of the bonding. The main advantages of this new technology are its electric connectivity, low thermal stress and hermeticity. This process can be utilized for the packaging of micro electro mechanical system (MEMS) devices or the production of SOI wafers with pre-fabricated electrodes and wires.
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页码:391 / 396
页数:5
相关论文
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