Monte Carlo Based Calculation of the Electron Dynamics in a Two-Dimensional GaN/AlGaN Heterostructure in the Presence of Strain Polarization Fields

We report on the workings of a Monte Carlo based simulator useful for studying electron transport in two-dimensional systems. The simulator utilizes a self-consistent solution of the Schroedinger and Poisson equations to obtain the allowed two-dimensional energy levels, band bending and electronic wavefunctions. Defect scattering through interface roughness and ionized impurities along with lattice scattering arising from polar optical, deformation potential and piezoelectric interactions are included in the model. The two-dimensional scattering rates are calculated using the numerically determined wavefunctions. The final state following polar optical scattering is determined numerically based on the two-dimensional physics of the process. The model further includes the effects of strain induced polarization fields present in GaN/AlGaN heterostructures. Transfer into the AlGaN layer and its effects are also considered. Calculations are presented for the steady-state velocity showing the importance of the new two-dimensional final state selection technique. Additionally, calculations are presented that show the importance of the strain polarization fields. © 2002, Kluwer Academic Publishers.