Thermal Oxidation of Ti and Pb Thin Films Deposited on Single-Crystal Silicon

被引:0
作者
V. A. Logacheva
E. A. Turenko
A. M. Khoviv
O. B. Yatsenko
机构
[1] Voronezh State University,
来源
Inorganic Materials | 2001年 / 37卷
关键词
Oxidation; Silicon; Titanium; Thin Film; Inorganic Chemistry;
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学科分类号
摘要
Thin Pb–Ti–O films on single-crystal Si were prepared by magnetron sputtering followed by thermal oxidation of Pb/Ti/Si and Ti/Pb/Si structures. Oxidation of Pb/Ti bilayers was found to yield lead oxides, which then react with Ti to form lead titanate. Ti/Pb bilayers on Si could be converted into stoichiometric lead titanate, through titanium and lead oxides, by oxidation between 870 and 1070 K. Some of the films exhibited ferroelectric properties.
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页码:466 / 468
页数:2
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