Recombination Dynamics of InGaN/GaN Multiple Quantum Wells With Different Well Thickness

Recombination dynamics of InGaN/GaN multiple quantum wells (MQWs) with different well thickness have been studied. From the behaviour of temperature dependent photoluminescence, we find that the activation energy decreases with the well thickness increasing. In addition, with temperature changing from 10K to room temperature, the “W” shape of full width of half maximum is also thickness related, and it becomes more obvious with the well thickness increasing. These results indicate that the dominant recombination dynamics change from exciton localization to quantum confined stark effect with well thickness increasing. From our measurement, the InGaN/GaN MQWs with 3nm thickness seems a turning point, which shows the best optimized optical and structural properties.