Possibility of experimental determination of band structure parameters in many-valley semiconductors

被引：0

作者：

A. I. Vahanyan

Y. M. Baghiyan

机构：

[1] Yerevan State University,

来源：

Journal of Contemporary Physics (Armenian Academy of Sciences) | 2014年 / 49卷

关键词：

many-valley semiconductor; band structure; charge carriers;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

We show possibility in principle to determine some parameters (density-of-states effective mass of different valleys, energy distances between valleys, energies of ionization of impurity levels split from different valleys) of the band structure in many-valley semiconductors, based on the experimental curve of temperature dependence of overall concentration of charge carriers.

引用

页码：165 / 167

页数：2