Optical phenomena in InAs/GaAs heterostructures with doped quantum dots and artificial molecules

被引：0
|
作者：
L. E. Vorob’ev
V. Yu. Panevin
N. K. Fedosov
D. A. Firsov
V. A. Shalygin
A. A. Andreev
Yu. B. Samsonenko
A. A. Tonkikh
G. E. Cirlin
N. V. Kryzhanovskaya
V. M. Ustinov
S. Hanna
A. Seilmeier
N. D. Zakharov
P. Werner
机构：
[1] St. Petersburg State Polytechnical University,Department of Physics
[2] University of Surrey,Ioffe Physicotechnical Institute
[3] Russian Academy of Sciences,Institute for Analytical Instrumentation
[4] Russian Academy of Sciences,Institute of Physics
[5] University of Bayreuth,undefined
[6] Max Planck Institute of Microstructure Physics,undefined
来源：
Semiconductors | 2005年 / 39卷
关键词：
Experimental Data; Matrix Element; Magnetic Material; Electromagnetism; Photoluminescence Spectrum;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Spectra of intraband absorption of polarized mid-IR light were investigated in undoped, p-, and n-doped InAs/GaAs quantum dots (QDs) covered with an InGaAs layer. Optical matrix elements for intraband electron and hole transitions in QDs have been calculated for different polarizations of light, and a good agreement with the experimental data is obtained. It is shown that the intraband absorption of light by electrons strongly exceeds the absorption by holes. Photoluminescence spectra and TEM images of structures with artificial molecules formed by pairs of QDs were studied.
引用
收藏
页码：50 / 53
页数：3
相关论文
共 50 条
  • [41] Intraband absorption in n-doped InAs/GaAs quantum dots
    Sauvage, S
    Boucaud, P
    Julien, FH
    Gerard, JM
    ThierryMieg, V
    APPLIED PHYSICS LETTERS, 1997, 71 (19) : 2785 - 2787
  • [42] Atomic scale characterization of Mn doped InAs/GaAs quantum dots
    Bozkurt, M.
    Grant, V. A.
    Ulloa, J. M.
    Campion, R. P.
    Foxon, C. T.
    Marega, E.
    Salamo, G. J.
    Koenraad, P. M.
    APPLIED PHYSICS LETTERS, 2010, 96 (04)
  • [43] Spin dynamics in p-doped InAs/GaAs quantum dots
    Braun, PF
    Lombez, L
    Marie, X
    Urbaszek, B
    Sénès, M
    Amand, T
    Kalevich, V
    Kavokin, K
    Krebs, O
    Voisin, P
    Ustinov, V
    PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2005, 242 (06): : 1233 - 1236
  • [44] Carrier relaxation of modulation-doped InAs/GaAs quantum dots
    Lee, JI
    Leem, JY
    Lee, HG
    PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2002, 15 (02): : 94 - 98
  • [45] Normal incidence infrared photoconductor of self-assembled InAs quantum dots in modulation doped AlGaAs/GaAs heterostructures
    Kim, MD
    Choo, AG
    Kim, TI
    Ko, SS
    Baek, DH
    Hong, SC
    JOURNAL OF CRYSTAL GROWTH, 2001, 227 : 1162 - 1165
  • [46] Rough InAs/GaAs quantum dots
    Bezerra, M. G.
    Farlas, G. A.
    Freire, J. A. K.
    Ferreira, R.
    PHYSICS OF SEMICONDUCTORS, PTS A AND B, 2007, 893 : 899 - +
  • [47] Dephasing in InAs/GaAs quantum dots
    Borri, P
    Langbein, W
    Mork, J
    Hvam, JM
    Heinrichsdorff, F
    Mao, MH
    Bimberg, D
    PHYSICAL REVIEW B, 1999, 60 (11): : 7784 - 7787
  • [48] Fabrication and optical properties of multishell InAs quantum dots on GaAs nanowires
    Yan, Xin
    Zhang, Xia
    Li, Junshuai
    Cui, Jiangong
    Ren, Xiaomin
    JOURNAL OF APPLIED PHYSICS, 2015, 117 (05)
  • [49] Optical emission range of structures with strained InAs quantum dots in GaAs
    Egorov, AY
    Zhukov, AE
    Kopev, PS
    Ledentsov, NN
    Maksimov, MV
    Ustinov, VM
    Tsatsulnikov, AF
    Alferov, ZI
    Fedorov, DL
    Bimberg, D
    SEMICONDUCTORS, 1996, 30 (08) : 707 - 710
  • [50] Optical pumping and reversal of hole spin in InAs/GaAs quantum dots
    Fras, F.
    Eble, B.
    Bernardot, F.
    Testelin, C.
    Chamarro, M.
    Miard, A.
    Lemaitre, A.
    APPLIED PHYSICS LETTERS, 2012, 100 (01)
12345