Optical phenomena in InAs/GaAs heterostructures with doped quantum dots and artificial molecules

被引：0
|
作者：
L. E. Vorob’ev
V. Yu. Panevin
N. K. Fedosov
D. A. Firsov
V. A. Shalygin
A. A. Andreev
Yu. B. Samsonenko
A. A. Tonkikh
G. E. Cirlin
N. V. Kryzhanovskaya
V. M. Ustinov
S. Hanna
A. Seilmeier
N. D. Zakharov
P. Werner
机构：
[1] St. Petersburg State Polytechnical University,Department of Physics
[2] University of Surrey,Ioffe Physicotechnical Institute
[3] Russian Academy of Sciences,Institute for Analytical Instrumentation
[4] Russian Academy of Sciences,Institute of Physics
[5] University of Bayreuth,undefined
[6] Max Planck Institute of Microstructure Physics,undefined
来源：
Semiconductors | 2005年 / 39卷
关键词：
Experimental Data; Matrix Element; Magnetic Material; Electromagnetism; Photoluminescence Spectrum;
D O I：
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中图分类号：
学科分类号：
摘要：
Spectra of intraband absorption of polarized mid-IR light were investigated in undoped, p-, and n-doped InAs/GaAs quantum dots (QDs) covered with an InGaAs layer. Optical matrix elements for intraband electron and hole transitions in QDs have been calculated for different polarizations of light, and a good agreement with the experimental data is obtained. It is shown that the intraband absorption of light by electrons strongly exceeds the absorption by holes. Photoluminescence spectra and TEM images of structures with artificial molecules formed by pairs of QDs were studied.
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页码：50 / 53
页数：3
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