An estimation of absorption parameters via optical characterization and theoretical analysis of (Ge1S2)100-X(As2Te3)X chalcogenides for Ir applications

The current investigation reports the optoelectronics studies for (Ge2S8)(100-x)(As2Te3)(x) (GSAT) (0 <= x <= 100) non-crystalline films. The GSAT glasses have been synthesised by using the conventional melt quench method. At 300 K and a vacuum of 10(-5) Torr, the GAST films have been thermally evaporated on cleaned glass substrates. The XRD (X-ray diffraction) curves insist the non-crystalline state of the GAST samples. The transmittance and reflectance spectra have been used to evaluate the absorption parameters, optical band gap (E-g), and tailing constraints of the Ge-S-As-Te glasses. Both the values of E-g and the absorption edge energy are lessening; nevertheless, the energy of band tail width rises with the enhancement of As2Te3 ratio at the expense of Ge2S8 contents. Some of the physically criteria viz. glass densities (rho), compactness (delta), and main atomic volume (V-m) were estimated for GAST glasses. Both the conductance and valance band positions have also been evaluated. The index of refraction (n) has been correlated with E-g values. The obtained results suggest that GSAT films are suitable for many optic devices.