The influence of temperature hysteresis at metal-semiconductor phase transition on current-voltage characteristic of VO2–based ceramics

被引：0
作者：
A. I. Ivon
V. R. Kolbunov
I. M. Chernenko
机构：
[1] Dnepropetrovsk National University,Radiophysical Department
来源：
Journal of Materials Science: Materials in Electronics | 2005年 / 16卷
关键词：
Phase Transition; Vanadium; Hysteresis Loop; Phase Transition Temperature; Equilibrium Temperature;
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学科分类号：
摘要：
The current-voltage characteristics of ceramics (wt%) 80VO2-15VPG-5Cu and 45VO2-15VPG-5Cu-35SnO2 were investigated (VPG—vanadium phosphate glass). After switching to high electric current, these characteristics show a hysteresis loop in the electric current increase-decrease cycle. The cause of hysteresis is the different phase transition temperatures in VO2 crystallites for transition from semiconductor phase to metallic phase and for the reverse transition. The distinction of phase transition temperatures leads to the different equilibrium temperatures in the filament of the metallic VO2 phase, when ‘electric current increases and decreases. As the result, different power dissipated by electric current in ceramics sample is necessary for ensuring thermal equilibrium in the filament. This is the reason why current-voltage characteristic registered at electric current increase do not coincide with characteristic registered at electric current decrease.
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页码：611 / 615
页数：4
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