Design and simulation of MEMS based capacitive pressure sensor for harsh environment

被引：0
|
作者：
K. Srinivasa Rao
B. Mohitha reddy
V. Bala Teja
G. V. S. Krishnateja
P. Ashok Kumar
K. S. Ramesh
机构：
[1] KLEF,Micro Electronics Research Group, Department of Electronics and Communication Engineering
[2] Vaddeswaram,undefined
来源：
Microsystem Technologies | 2020年 / 26卷
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摘要：
In this paper, we have designed and simulated a capacitive pressure sensor for harsh environment. The sensor is metal–insulator-metal type sensor in which the structure is designed using gold and the dielectric using silicon nitrate with thickness of 0.5 μm. The device achieves a linear characteristic response and high sensitivity. MIM consists of a circular clamped-edges gold membrane suspended over sealed cavity on the upper metal surface which is placed on the silicon substrate. The proposed MEMS capacitive pressure sensor is optimised and designed in COMSOL Multiphysics. The sensor illustrated with a proof mass 140 μm diameter, with air gap from 0.15 to 2 μm and pressure ranging from 200 to 1500Mpa.
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页码：1875 / 1880
页数：5
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