Understanding the Effects of Stress on the Crystallization of Amorphous Silicon

被引：0
作者：
Li Cai
Min Zou
Husam Abu-Safe
Hameed Naseem
William Brown
机构：
[1] The University of Arkansas,Department of Electrical Engineering
[2] The University of Arkansas,Department of Mechanical Engineering
来源：
Journal of Electronic Materials | 2007年 / 36卷
关键词：
Amorphous; silicon; crystallization; aluminum; stress;
D O I：
暂无
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学科分类号：
摘要：
This paper presents the results of a systematic study on the effects of stress on aluminum-induced crystallization (AIC) of plasma-enhanced chemical-vapor-deposited (PECVD) amorphous silicon (a-Si:H). To decouple the impact of stress on the AIC of a-Si:H from other factors that may affect crystallization, such as a-Si:H and aluminum deposition conditions, identical thin film structures [Al (200 nm)/a-Si:H (200 nm)] were deposited on the front surface of all samples. On the back surfaces, various amorphous silicon films were deposited to adjust the curvature of the samples and, therefore, the stress in the a-Si:H film on the front surface. It was found that tensile stress in a-Si:H can retard the AIC of a-Si:H.
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页码：191 / 196
页数：5
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