Simulation and Performance Evaluation of Charge Plasma Based Dual Pocket Biosensor using SiGe-Heterojunction TFET Design

被引:0
作者
Robi Paul
机构
[1] Shahjalal University of Science and Technology,Department of Electrical and Electronic Engineering
来源
Silicon | 2023年 / 15卷
关键词
Biosensor; Charge plasma; Dielectric Modulation (DM); Electron Tunneling Rate (ETR); I; /I; ratio; Sensitivity; Subthreshold Swing (SS); Tunneling Field Effect Transistors (TFET);
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学科分类号
摘要
Conventional biosensor designs are often vulnerable to issues like random dopant fluctuations (RDFs) and high thermal budgets due to their design and the device they are based on. The main reason behind such issues is the complexity of maintaining uniform doping levels throughout the device structure. This manuscript investigates a biosensor structure utilizing a dual pocket junctionless SiGe-Heterostructured TFET design to overcome such shortcomings. The implementation of the doping charge plasma technique with the uniform doping of 1×1015cm-3\documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$$\mathrm {1}\times \mathrm {10}^{\mathrm {15}} {cm}^{\mathrm {-3}}$$\end{document} along an integrated SiGe-Heterostructure layer has improved the tunneling process while also effectively eliminating issues like random dopant fluctuations (RDF). Again the overall performance also depends on the sensitivity of the sensor design. Increasing the trapping area for biomolecules at the same technological node by increasing the pocket length or by adding a pocket region leads to rapid changes in the sensor’s electric properties owing to shifting dielectric constants (k) and charge densities (in both positive and negative situations), improving in the overall detection process. The influence of these parameters on the device’s Drain current, Surface Potential, Electron Tunneling Rate (ETR), Subthreshold Swing (SS), and Ion/Ioff ratio is also explored. The introduction of the added pocket region gives us scalability while also showing a higher sensitivity of 5.38×109\documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$$\mathrm {5.38} \times \mathrm {10}^{\mathrm {9}}$$\end{document} for a dielectric constant being 12 and neutrally charged while rising to nearly 1.43×1010\documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$$\mathrm {1.43} \times \mathrm {10}^{\mathrm {10}}$$\end{document} if the molecules are positively charged. With the improvement in drain current sensitivity due to the additional pocket and junctionless design, this work will undoubtedly give researchers a roadmap for the future generation of highly sensitive biosensor alternatives.
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页码:2147 / 2162
页数:15
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共 80 条
[1]  
Wadhwa G(2018)Label free detection of biomolecules using charge-plasma-based gate underlap dielectric modulated junctionless TFET J Electron Mater 47 4683-4693
[2]  
Raj B(2006)Biosensors: A tutorial review IEEE Potentials 25 35-40
[3]  
Mohanty SP(2015)Novel charge plasma based dielectric modulated impact ionization MOSFET as a biosensor for label-free detection Superlattices Microstruct 86 446-455
[4]  
Kougianos E(2022)Analytical and compact modeling analysis of a SiGe hetero-material vertical L-shaped TFET Silicon 14 2135-2145
[5]  
Chanda M(1998)Cramming more components onto integrated circuits Proc IEEE 86 82-85
[6]  
Dey P(2001)Device scaling limits of Si MOSFETs and their application dependencies Proc IEEE 89 259-288
[7]  
De S(2020)Two-dimensional analytical modeling of the surface potential and drain current of a double-gate vertical t-shaped tunnel field-effect transistor J Comput Electron 19 1154-1163
[8]  
Sarkar CK(2019)Design and analysis of a heterojunction vertical t-shaped tunnel field effect transistor J Electron Mater 48 6253-6260
[9]  
Singh S(2021)Design and analysis of double-gate junctionless vertical TFET for gas sensing applications Appl Phys A 127 1-7
[10]  
Raj B(2021)Analytical modelling and simulation of Si-Ge hetero-junction dual material gate vertical T-shaped tunnel FET Silicon 13 1139-1150