Fully integrated CMOS tunable power amplifier using reconfigurable input/interstage/output matching networks

被引：0
|
作者：
S. Babak Hamidi
Debasis Dawn
机构：
[1] North Dakota State University,Department of Electrical and Computer Engineering
[2] University of Washington,School of Engineering and Technology
来源：
Analog Integrated Circuits and Signal Processing | 2021年 / 107卷
关键词：
CMOS power amplifier; Reconfigurable matching network; Saturated output power; Frequency band;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
This paper presents a two-stage tunable power amplifier (PA) fully-integrated in 130 nm CMOS process. This multi-band PA consists of reconfigurable input, interstage, and output matching networks in order to tune the center frequency in use. The proposed tunable power amplifier enables three different bands with center frequency of 900 MHz, 1450 MHz, and 1900 MHz. By switching these bands, the designed power amplifier covers frequency range of 700 MHz–2200 MHz known as Long-Term Evolution mobile network. As a result, the proposed tunable power amplifier obtains small-signal gain (S21) of 27.8 dB/29.4 dB/28.6 dB, saturated output power (Psat) of 22.4 dBm/23.0 dBm/23.2 dBm, and power added efficiency of 21.0%/23.7%/25.0% at three targeted frequency bands, respectively. The proposed fully-integrated triple-band power amplifier chip layout occupies an area of 2.25 mm2 including bond pads.
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页码：73 / 82
页数：9
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