Development of Field Alignment Methods for Electron-Вeam Lithography in the Case of X-Ray Bragg–Fresnel Lenses

被引:1
作者
Knyazev M.A. [1 ]
Svintsov A.A. [1 ]
Fahrtdinov R.R. [1 ]
机构
[1] Institute of Microelectronics Technology and High Purity Materials, Russian Academy of Sciences, Chernogolovka, Moscow oblast
基金
俄罗斯基础研究基金会;
关键词
diffraction gratings; electron-beam lithography; X-ray optics;
D O I
10.1134/S1027451018050270
中图分类号
学科分类号
摘要
A method providing more than a tenfold improvement in the precision of exposure field alignment in electron-beam lithography is proposed. The method uses a scanning electron microscope with a standard mechanical positioning system and alignment markers produced by contact photolithography. Bragg–Fresnel lens (1–3–5 orders) with a tenfold decrease in the error of exposure field alignment through the use of mechanical stages are created via this technique. © 2018, Pleiades Publishing, Ltd.
引用
收藏
页码:957 / 960
页数:3
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