Electrical and photoelectric properties of a-Si:H layered films: The influence of thermal annealing

被引：0

作者：

I. A. Kurova

N. N. Ormont

E. I. Terukov

I. N. Trapeznikova

V. P. Afanas’ev

A. S. Gudovskikh

机构：

[1] Moscow State University,Ioffe Physicotechnical Institute

[2] Russian Academy of Sciences,undefined

[3] St. Petersburg Electrotechnical University,undefined

来源：

Semiconductors | 2001年 / 35卷

关键词：

Band Conductivity; Magnetic Material; Fermi Level; Electromagnetism; Thermal Annealing;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

The electrical and photoelectric properties of layered a-Si:H films obtained by cyclic plasmochemical deposition and the effect of thermal annealing on these properties have been studied. Unannealed films demonstrate high photosensitivity, with a photoconductivity to dark conductivity ratio of K=3.4×106. Increasing the annealing temperature causes the film photosensitivity to fall because of a considerable decrease in the photoconductivity and increase in the dark conductivity. For films annealed at temperatures above 500°C, the conductivity is the sum of the band conductivity and the hopping conductivity via states at the Fermi level.

引用

页码：353 / 356

页数：3

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