Annealing and photobleaching effects on the absorption spectra of gamma-irradiated BaFI crystals

We have studied processes induced in gamma-irradiated BaFI crystals by illumination and thermal annealing and identified defect centers responsible for the observed absorption bands. We assign the 205-nm absorption band to α(F−) centers, the 230-nm band to α(I−) centers, the 270-nm band to Fi0 centers, the 370-nm band to Ii0 centers, the bands around 480 nm to F(F−) centers, and the 610-nm band to F(I−) centers. The proposed assignment accounts well for the radiation-induced processes identified in the crystals.