Ultrafast crystallization of amorphous silicon thin films by using an electron beam annealing method

被引：0
|
作者：
Changheon Kim
Sangwoo Lim
Chaehwan Jeong
机构：
[1] Yonsei University,Department of Chemical and Biomolecular Engineering
[2] Korea Institute of Industrial Technology,Applied Optics & Energy R&BD Group
来源：
Journal of the Korean Physical Society | 2014年 / 64卷
关键词：
Amorphous silicon; Thin films; Electron-beam annealing; Structural properties; X-ray diffraction;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
An electron-beam annealing method has been adapted for rapid crystallization of p-type amorphous-silicon thin films deposited by using an evaporation method. The amorphous phase of silicon thin-film was crystallized by using an accelerating DC voltage higher than the 4.0 kV for 120 s. From the crystalline properties, the nanocrystalline silicon thin film after electron-beam annealing showed mainly (111), (220), and (311) orientations and a crystalline volume fraction (Xc) of 93.6%. The crystalline properties improved with increasing DC voltage for rapid annealing times. The electron-beam annealing method can be a powerful method for achieving rapid crystallization of amorphous materials.
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页码：1091 / 1095
页数：4
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