Preparation and characterization of Mn-doped BaTiO3 thin films by magnetron sputtering

被引：0
|
作者：
J. P. Chu
T. Mahalingam
C. F. Liu
S. F. Wang
机构：
[1] National Taiwan Ocean University,Institute of Materials Engineering
[2] National Taipei University of Technology,Department of Materials and Minerals Resources Engineering
[3] Alagappa University,Department of Physics
来源：
Journal of Materials Science | 2007年 / 42卷
关键词：
BaTiO3; Rapid Thermal Anneal; Barium Titanate; Leakage Current Density; BaTiO3 Film;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Barium titanate (BaTiO3) thin films doped with Mn (0.1–1.0 at%) were prepared by r.f. magnetron sputtering technique. Oxygen/argon (O2/Ar) gas ratio is found to influence the sputtering rate of the films. The effects of Mn doping on the structural, microstructural and electrical properties of BaTiO3 thin films are studied. Mn-doped thin films annealed at high temperatures (700 °C) exhibited cubic perovskite structure. Mn doping is found to reduce the crystallization temperature and inhibit the grain growth in barium titanate thin films. The dielectric constant increases with Mn content and the dielectric loss (tan δ) reveals a minimum value of 0.0054 for 0.5% Mn-doped BaTiO3 films measured at 1 MHz. The leakage current density decreases with Mn doping and is 10−11 A/cm−2 at 6 kV/cm for 1% Mn-doped thin films.
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页码：346 / 351
页数：5
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