Features of the Formation of Ripple Structures on the Surface of Silicon under Irradiation with a Focused Gallium Ion Beam

被引:0
作者
M. A. Smirnova
V. I. Bachurin
L. A. Mazaletsky
D. E. Pukhov
A. B. Churilov
A. S. Rudy
机构
[1] Valiev Institute of Physics and Technology,
[2] Yaroslavl Branch,undefined
[3] Russian Academy of Sciences,undefined
来源
Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques | 2021年 / 15卷
关键词
sputtering; ripple relief; focused ion beam;
D O I
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中图分类号
学科分类号
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页码:S150 / S156
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[1]  
Makeev M. A.(2002)Nucl. Instrum. Methods Phys. Res Sect. B 197 185-undefined
[2]  
Cuerno R.(2002)Nucl. Instrum. Methods Phys. Res J. Phys.: Condens. Matter 14 8153-undefined
[3]  
Barbasi A.(2014)Izv. Ross. Akad. Nauk Mater. Sci. Eng. R 86 1-undefined
[4]  
Valbusa U.(2000)Nucl. Instrum. Methods Phys. Res Surf. Interface Anal. 29 721-undefined
[5]  
Borgano C.(2000)MRS Online Proc Vacuum 56 241-undefined
[6]  
Mongeot F.(1995)undefined Surf. Interface Anal. 23 514-undefined
[7]  
Munoz-Garcia J.(1994)undefined J. Vac. Sci. Technol., A 12 3205-undefined
[8]  
Vazquez L.(1999)undefined Sect. B 147 310-undefined
[9]  
Castro M.(1998)undefined Ser. Fiz. 62 703-undefined
[10]  
Wittmaack K.(2003)undefined Appl. Phys. A 76 1017-undefined