Direct One-Step Plasma-Chemical Synthesis of Nanostructured β-Ga2O3-GaN Thin Films of Various Compositions

被引：0

作者：

Mochalov, L. A. ^{[1
]}

Kudryashov, M. A. ^{[1
]}

Vshivtsev, M. A. ^{[1
]}

Kudryashova, Yu. P. ^{[1
]}

Prokhorov, I. O. ^{[1
]}

Knyazev, A. V. ^{[1
]}

Almaev, A. V. ^{[2
]}

Yakovlev, N. N. ^{[2
]}

Chernikov, E. V. ^{[2
]}

Erzakova, N. N. ^{[2
]}

机构：

[1] Lobachevsky State Univ Nizhny Novgorod, Nizhnii Novgorod 603022, Russia

[2] OOO Fokon, Kaluga 248009, Russia

来源：

HIGH ENERGY CHEMISTRY | 2024年 / 58卷 / 03期

基金：

俄罗斯科学基金会;

关键词：

thin films; gas sensors; gallium oxide; OPTICAL-PROPERTIES; GALLIUM OXIDE; SENSORS; GA2O3;

D O I：

10.1134/S0018143924700139

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

For the first time, nanostructured thin films of the beta-Ga2O3-GaN system have been obtained by plasma-enhanced chemical vapor deposition (PECVD) on c-plane sapphire substrates. High-purity gallium metal, as well as high-purity gaseous nitrogen and oxygen, were used as sources of macrocomponents. Low-temperature nonequilibrium plasma of an inductively coupled RF (40.68 MHz) discharge at reduced pressure (0.01 torr) was the initiator of chemical transformations between the reactants. A mixture of oxygen and nitrogen was used as a plasma-forming gas. The plasma-chemical process was studied using optical emission spectroscopy (OES). The resulting beta-Ga2O3-GaN thin films with a GaN content of 2 to 7% were characterized by various analytical methods.

引用

页码：322 / 327

页数：6

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