Electrical properties of the InP/InGaAs pnp heterostructure-emitter bipolar transistor

被引：0
作者：
J. H. Tsai
W. Ch. Liu
D. F. Guo
Y. Ch. Kang
Sh. Y. Chiu
W. Sh. Lour
机构：
[1] National Kaohsiung Normal University,Department of Electronic Engineering
[2] National Cheng-Kung University,Institute of Microelectronics, Department of Electrical Engineering
[3] Air Force Academy,Department of Electronic Engineering
[4] National Taiwan Ocean University,Department of Electrical Engineering
来源：
Semiconductors | 2008年 / 42卷
关键词：
85.30.Pq; 73.40.Kp;
D O I：
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摘要：
The dc performances of an InP/InGaAs pnp heterostructure-emitter bipolar transistor are investigated by theoretical analysis and experimental results. Though the valence band discontinuity at the InP/InGaAs heterojunction is relatively large, the addition of a heavily-doped as well as thin p+-InGaAs emitter layer between p-InP confinement and n+-InGaAs base layers effectively eliminates the potential spike at emitter-base junction and simultaneously lowers the emitter-collector offset voltage and increases the potential barrier for electrons. Experimentally, a high current gain of 88 and a low offset voltage of 54 mV have been achieved.
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页码：346 / 349
页数：3
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