Effect of Proton Irradiation on the Properties of High-Voltage Integrated 4H-SiC Schottky Diodes at Operating Temperatures

被引：0

作者：

A. A. Lebedev

V. V. Kozlovskii

M. E. Levinshtein

D. A. Malevskii

G. A. Oganesyan

机构：

[1] loffe Institute,

[2] Peter the Great Saint-Petersburg Polytechnic University,undefined

来源：

Semiconductors | 2023年 / 57卷

关键词：

silicon carbide; Schottky diodes; proton irradiation; current-voltage characteristics; annealing;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

引用

页码：125 / 129

页数：4

共 67 条

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