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Hydrogenated silicon oxycarbonitride films. Part III. Thermodynamic modeling of the Si-C-N-O-H system
被引：0
|作者：
A. N. Golubenko
N. I. Fainer
E. F. Titova
机构：
[1] Novosibirsk National Research State University,Nikolaev Institute of Inorganic Chemistry
[2] Russian Academy of Sciences,undefined
[3] Siberian Branch,undefined
来源：
Glass Physics and Chemistry
|
2015年
/
41卷
关键词：
thermodynamic modeling;
Si-C-N-O-H system;
hexamethyldisilazane;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
The thermodynamic modeling of the deposition of the condensed phase of a complex composition has been performed in the Si-C-N-O-H system in the broad temperature range of 300–1300 K under total pressure Ptotal0 = 6−7×10−2 Torr and residual air pressure in reactor Pres = 5 × 10−3 Torr using the initial gas mixtures of organosilicon compound, hexamethyldisilazane (HMDS), with nitrogen, oxygen, air mixture (O2 + 4N2), and a variable mixture of oxygen with nitrogen (O2 + xN2). The temperature boundaries of multiphase ranges, where one can anticipate the deposition of silicon oxycarbonitride, silicon oxycarbides, and silicon oxynitride, have been determined.
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页码：334 / 339
页数：5
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