Structural, Morphological, Opto-Electrical and Photoluminescence Studies of Nanoplate Structured Zn-Doped Sn2S3 Thin Films

Undoped and Zn-doped Sn2S3 thin films were fabricated by spray pyrolysis technique on glass substrates kept at 400 °C. All the films exhibited orthorhombic crystal structure with a preferential orientation along the (2 1 1) plane. Nanoplate structures were observed from the SEM images and the presence of Zn in the doped films was confirmed from the EDX spectra. The average optical transmittance of all the films in the visible region was found to be nearly equal to 80 %. Film resistivity initially decreased from 3.27 × 10−1 to 0.78 × 10−1 Ω-cm for the Sn2S3 thin film doped with 1 wt% Zn concentration and for higher doping concentration it increased. The obtained results showed that the Sn2S3 thin film doped with 1 wt% Zn concentration had better physical properties which made them suitable for photovoltaic applications.