High-performance vertical field-effect organic photovoltaics

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作者
Xiaomin Wu
Changsong Gao
Qizhen Chen
Yujie Yan
Guocheng Zhang
Tailiang Guo
Huipeng Chen
机构
[1] Fuzhou University,Institute of Optoelectronic Display, National & Local United Engineering Lab of Flat Panel Display Technology
[2] Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China,Fujian Provincial Key Laboratory of Quantum Manipulation and New Energy Materials, College of Physics and Energy
[3] Fujian Normal University,Research Center for Microelectronics Technology
[4] Fujian University of Technology,undefined
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摘要
Limited by the inherent energy loss (Eloss) in carrier transport process, the device efficiency of organic solar cells shows inferior to traditional inorganic photovoltaic devices. Generally, molecular design, morphology optimization and interfacial engineering are usually required to alleviate Eloss. Here, vertical field-effect organic photovoltaic (VFEOPV) by integrating an bulk-heterojunction (BHJ) organic photovoltaic (OPV) with vertical field effect transistor (VFET) is invented, in which VFET generates a large, uneven, internal electric field, eliminating the requirement for driving force to dissociate excitons and prevents non-radiative recombination in OPV. In this way, the performance of solar cell can be well controlled by the gate voltage of VFET and the Eloss of VFEOPVs based on J71: ITIC system is dramatically reduced below 0.2 eV, significantly improving power conversion efficiency (PCE) from 10% to 18% under gate voltage of 0.9 V, which only causes negligible additional power consumption (~10−4mJ/cm2). Besides, the device also exhibits multi-functionality including transistor and phototransistors with excellent photodector performance. This work provides a new and general strategy to improve the OPV performance which is compatible with present optimization methods, and can be applied to improve PCE of other types of solar cells such as Perovskite and inorganic solar cells.
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