Non-Ohmic and dielectric properties of Ba-doped CaCu3Ti4O12 ceramics

被引:0
作者
Prasit Thongbai
Somsack Vangchangyia
Ekaphan Swatsitang
Vittaya Amornkitbamrung
Teerapon Yamwong
Santi Maensiri
机构
[1] Khon Kaen University,Department of Physics, Faculty of Science
[2] Khon Kaen University,Integrated Nanotechnology Research Center (INRC)
[3] Khon Kaen University,Materials Science and Nanotechnology Program, Faculty of Science
[4] Thailand Science Park,National Metal and Materials Technology Center (MTEC)
[5] Suranaree University,School of Physics, Institute of Science
来源
Journal of Materials Science: Materials in Electronics | 2013年 / 24卷
关键词
Large Ionic Radius; CCTO Ceramic; Good Dielectric Property; CCTO Sample; Impedance Spectroscopy Analysis;
D O I
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中图分类号
学科分类号
摘要
The microstructure, dielectric and electrical properties of Ca1−xBaxCu3Ti4O12 (where x = 0, 0.025, and 0.05) ceramics were investigated. Our microstructural analyses revealed that Ba2+ doping ions preferentially form in a secondary phase, and are not introduced into the CaCu3Ti4O12 lattice. Grain growth rate of CaCu3Ti4O12 ceramics was significantly inhibited by the Ba-related secondary phase particles, resulting in a large decrease in their mean grain size. The dielectric permittivity of CaCu3Ti4O12 ceramics decreased with increasing Ba content. Their loss tangent decreased after addition of CaCu3Ti4O12 with 2.5 mol% of Ba2+, and increased with increasing Ba contents to 5.0 mol%. The nonlinear coefficient and breakdown field of the Ca1−xBaxCu3Ti4O12 ceramics were significantly enhanced by adding 2.5 mol% of Ba2+, followed by a slight decrease as Ba2+ concentration was increased to 5.0 mol%. Using impedance spectroscopy analysis, it was revealed that variations in dielectric and non-Ohmic properties are associated with electrical response of grain boundaries. This supports the internal barrier layer capacitor model.
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页码:875 / 883
页数:8
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