Effect of the metal-semiconductor phase transition on the capacitance of an aluminum-dielectric-vanadium dioxide heterostructure

被引：0
|
作者：
A. A. Bugaev
S. E. Nikitin
E. I. Terukov
机构：
[1] Russian Academy of Sciences,Ioffe Physicotechnical Institute
来源：
Technical Physics Letters | 2001年 / 27卷
关键词：
Dioxide; Phase Transition; Vanadium; Transition Temperature; Phase Transition Temperature;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
The temperature dependence of the electric capacitance of an aluminum-dielectric-vanadium dioxide heterostructure was studied. The capacitance exhibits a jumplike change in the region of the metal-semiconductor phase transition temperature. A qualitative model is suggested that relates a change in the capacitance to a jump in the conductivity of vanadium caused by the phase transition.
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页码：924 / 925
页数：1
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