Effect of the metal-semiconductor phase transition on the capacitance of an aluminum-dielectric-vanadium dioxide heterostructure

被引：0

作者：

A. A. Bugaev

S. E. Nikitin

E. I. Terukov

机构：

[1] Russian Academy of Sciences,Ioffe Physicotechnical Institute

来源：

Technical Physics Letters | 2001年 / 27卷

关键词：

Dioxide; Phase Transition; Vanadium; Transition Temperature; Phase Transition Temperature;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

The temperature dependence of the electric capacitance of an aluminum-dielectric-vanadium dioxide heterostructure was studied. The capacitance exhibits a jumplike change in the region of the metal-semiconductor phase transition temperature. A qualitative model is suggested that relates a change in the capacitance to a jump in the conductivity of vanadium caused by the phase transition.

引用

页码：924 / 925

页数：1

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