Memristive devices for computing

被引:0
作者
Yang J.J. [1 ]
Strukov D.B. [2 ]
Stewart D.R. [3 ]
机构
[1] Hewlett-Packard Laboratories, Palo Alto
[2] Department of Electrical and Computer Engineering, University of California, Santa Barbara, Santa Barbara
[3] Steacie Laboratories, National Research Council of Canada
来源
Yang, J.J. (jianhuay@hp.com) | 1600年 / Nature Publishing Group卷 / 08期
关键词
Memristors;
D O I
10.1038/nnano.2012.240
中图分类号
学科分类号
摘要
Memristive devices are electrical resistance switches that can retain a state of internal resistance based on the history of applied voltage and current. These devices can store and process information, and offer several key performance characteristics that exceed conventional integrated circuit technology. An important class of memristive devices are two-terminal resistance switches based on ionic motion, which are built from a simple conductor/insulator/conductor thin-film stack. These devices were originally conceived in the late 1960s and recent progress has led to fast, low-energy, high-endurance devices that can be scaled down to less than 10 nm and stacked in three dimensions. However, the underlying device mechanisms remain unclear, which is a significant barrier to their widespread application. Here, we review recent progress in the development and understanding of memristive devices. We also examine the performance requirements for computing with memristive devices and detail how the outstanding challenges could be met. © 2013 Macmillan Publishers Limited. All rights reserved.
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页码:13 / 24
页数:11
相关论文
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