Morphologies of GaN one-dimensional materials

被引：0

作者：

J.Y. Li

Z.Y. Qiao

X.L. Chen

Y.G. Cao

Y.C. Lan

C.Y. Wang

机构：

[1] Department of Physical Chemistry,

[2] University of Science and Technology Beijing,undefined

[3] Beijing,undefined

[4] 100083,undefined

[5] P.R. China,undefined

[6] Institute of Physics,undefined

[7] Chinese Academy of Sciences,undefined

[8] Beijing,undefined

[9] 100080,undefined

[10] P.R. China,undefined

来源：

Applied Physics A | 2000年 / 71卷

关键词：

PACS: 81.05.Ea;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

GaN one-dimensional materials with different morphologies were formed on LaAlO3 crystal, silicon crystal and quartz glass substrates through a simple sublimation method. They were characterized by powder X-ray diffraction (XRD), field-emission scanning electron microscopy (FE-SEM) and energy-dispersive X-ray (EDX) spectroscopy. FE-SEM images showed that the morphologies of the one-dimensional materials included straight nanorods, curved nanowires, nanoribbons, zigzag nanorods and beaded or capture-tree nanorods. XRD and EDX studies indicated that all the one-dimensional materials were wurtzite GaN.

引用

页码：587 / 588

页数：1