New system of self-assembled GaSb/GaP quantum dots

被引：0
作者：
D. S. Abramkin
M. A. Putyato
A. K. Gutakovskii
B. R. Semyagin
V. V. Preobrazhenskii
T. S. Shamirzaev
机构：
[1] Russian Academy of Sciences,Rzhanov Institute of Semiconductor Physics
[2] Siberian Branch,undefined
来源：
Semiconductors | 2012年 / 46卷
关键词：
GaSb; Misfit Dislocation; Band Alignment; Excitation Power Density; Quasi Momentum;
D O I：
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中图分类号：
学科分类号：
摘要：
The atomic structure and energy spectrum of self-assembled GaSb/GaP quantum dots are discussed. It is shown that the quantum dots consist mainly of fully relaxed GaSb and have type-I band alignment with the ground electron state at the indirect valley of the GaSb conduction band.
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页码：1534 / 1538
页数：4
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