A magnetic field sensor based on the mechanoelectric effect in semiconductors

被引：0

作者：

Sh. M. Aliev

I. K. Kamilov

A. K. Ataev

K. M. Aliev

A. Kh. Abduev

机构：

[1] Russian Academy of Sciences,Institute of Physics, Dagestan Scientific Center

来源：

Technical Physics Letters | 2001年 / 27卷

关键词：

Magnetic Field; Field Sensor; Magnetic Field Sensor; Sensitive Magnetic Field; Magnetic Field Transducer;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

A highly sensitive magnetic field transducer based on the mechanoelectric effect in semiconductors is proposed.

引用

页码：544 / 545

页数：1