High-voltage solid-state switches for microsecond pulse power

被引：0

作者：

M. V. Malashin

S. I. Moshkunov

I. E. Rebrov

V. Yu. Khomich

E. A. Shershunova

机构：

[1] Russian Academy of Sciences,Institute for of Electrophysics and Electric Power

来源：

Instruments and Experimental Techniques | 2014年 / 57卷

关键词：

State Duration; Insulate Gate Bipolar Transistor; High Voltage Switch; High Voltage Insulation; High Voltage Module;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

A method that controls solid-state insulated gate bipolar transistor (IGBT) switches, allowing one to increase their ON-state duration time from fractions of microseconds up to milliseconds, is proposed. It is shown that the ON-state duration of the switches is limited only by their overheating. The modular design of the high-voltage solid-state switch with a 16-kV operating voltage and 60-A pulse current is experimentally implemented.

引用

页码：140 / 143

页数：3