Performance Optimization of CuSbS2 Photovoltaics Based on Comparison Between Experimental and Theoretical Base Model Results

As the global energy landscape is migrating toward the development of cleaner, renewable energy, the quest to develop thin-film photovoltaics (TFPV) that are cheap, eco-friendly, and highly efficient has increased. Copper antimony sulfide (CAS) TFPV has been identified as a promising candidate for the development of a highly efficient solar cell. However, the recently reported efficiency of the CAS TFPV of about 3% is still very low. Consequently, numerical modeling and simulation of CAS TFPVs was carried out using the Solar Cell Capacitance Simulator (SCAPS-1D) with a view to optimizing the performance of CAS TFPVs. Simulation of the baseline model yielded performance characteristics that are in good agreement with the reported experimental values. The impact of parameters such as thickness, minority carrier lifetime, absorption coefficient, and spectrum on the device was studied on various device components in order to improve its performance. Results show that fluorine-doped tin oxide (FTO) and TiO2 window layer materials gave the best performance characteristics for CAS TFPVs. The optimal value of the minority carrier lifetime and absorption coefficient were observed to be at 0.8 ns and 9 × 104 cm−1. The optimal spectrum range for device simulation was obtained at 400–850 nm. Simulating the device with these parameters, highly improved performance characteristics of Voc = 0.82 V, Jsc = 15.81 mA/cm2, fill factor (FF) = 57.05%, and η = 16.98% were obtained.