Grain boundary defect compensation in Ti-doped BaFe0.5Nb0.5O3 ceramics

被引：0
作者：
Xiaojun Sun
Jianming Deng
Saisai Liu
Tianxiang Yan
Biaolin Peng
Wenhao Jia
Zaoming Mei
Hongbo Su
Liang Fang
Laijun Liu
机构：
[1] Guilin University of Technology,Key Laboratory of Nonferrous Materials and New Processing Technology, Ministry of Education, College of Materials Science and Engineering, Guangxi Universities Key Laboratory of Non
[2] Guangxi University,ferrous Metal Oxide Electronic Functional Materials and Devices
[3] Shanghai Getong Enterprise Co.,School of Physical Science and Technology and Guangxi Key Laboratory for Relativistic Astrophysics
[4] Ltd.,undefined
[5] Henan LiHeng Building Materials Co.,undefined
[6] Ltd.,undefined
[7] Henan Province Product Quality Supervision and Inspection Center,undefined
来源：
Applied Physics A | 2016年 / 122卷
关键词：
Oxygen Vacancy; Dielectric Relaxation; Dielectric Loss Factor; Ionize Oxygen Vacancy; Conductivity Activation Energy;
D O I：
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中图分类号：
学科分类号：
摘要：
Giant dielectric ceramics Ba(Nb0.5Fe0.5-xTix)O3 (BNFT) have been fabricated by a conventional solid-state reaction. According to X-ray diffraction analysis, the crystal structure of these ceramics can be described by the cubic centrosymmetric with Pm-3m space group. The real part (ε’) of dielectric permittivity and dielectric loss (tanδ) of the BNFT ceramics was measured in a frequency range from 40 Hz to 100 MHz at room temperature. The (ε’) of all these samples displays a high value (~6500) and a small frequency-dependence from 1 kHz to 1 MHz. We have established a link between conductivity activation energy and defect compensation at grain boundaries. The Ti4+-doped Ba(Nb0.5Fe0.5)O3 as a donor makes a great influence on the grain boundary behavior, which restricts the migration of oxygen vacancy and depresses dielectric loss factor for Ba(Nb0.5Fe0.5)O3 ceramics.
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