AlGaN/GaN HEMTs grown by ammonia MBE

被引：0
|
作者：
V. V. Volkov
V. P. Ivanova
Yu. S. Kuz’michev
S. A. Lermontov
Yu. V. Solov’ev
D. A. Baranov
A. P. Kaidash
D. M. Krasovitskii
M. V. Pavlenko
S. I. Petrov
Yu. V. Pogorel’skii
I. A. Sokolov
M. A. Sokolov
M. V. Stepanov
V. P. Chalyi
机构：
[1] “Svetlana-Elektronpribor” Corporation,
[2] “Scientific and Technological Equipment” Corporation,undefined
来源：
Technical Physics Letters | 2004年 / 30卷
关键词：
Ammonia; Good Prospect; Electron Mobility; High Electron; Experimental Technology;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
The experimental technology and characteristics of domestic AlGaN/GaN high electron mobility transistors are described. The results show good prospects for further development.
引用
收藏
页码：380 / 382
页数：2
相关论文
共 50 条
  • [1] AlGaN/GaN HEMTs grown by ammonia MBE
    Volkov, VV
    Ivanova, VP
    Kuz'michev, YS
    Lermontov, SA
    Solov'ev, YV
    Baranov, DA
    Kaidash, AP
    Krasovitskii, DM
    Pavlenko, MV
    Petrov, SI
    Pogorel'skii, YV
    Sokolov, IA
    Sokolov, MA
    Stepanov, MV
    Chalyi, VP
    TECHNICAL PHYSICS LETTERS, 2004, 30 (05) : 380 - 382
  • [2] MBE-grown AlGaN/GaN HEMTs on SiC
    Rajan, S
    Chakraborty, A
    Mishra, UK
    Poblenz, C
    Waltereit, P
    Speck, JS
    High Performance Devices, Proceedings, 2005, : 108 - 113
  • [3] Uniformity of AlGaN/GaN HEMTs grown by ammonia-MBE on 2-in. sapphire substrate
    Hsu, EM
    Bardwell, JA
    Haffouz, S
    Tang, H
    Storey, C
    Chyurlia, P
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2005, 152 (08) : G660 - G663
  • [4] AlGaN/GaN/AlGaN DH-HEMTs grown by MBE on Si(111)
    Cordier, Y
    Semond, F
    Hugues, M
    Natali, F
    Lorenzini, P
    Haas, H
    Chenot, S
    Laügt, M
    Tottereau, O
    Vennegues, P
    Massies, J
    JOURNAL OF CRYSTAL GROWTH, 2005, 278 (1-4) : 393 - 396
  • [5] Power performance of AlGaN/GaN HEMTs grown on SiC by Ammonia-MBE at 4 and 10 GHz
    Poblenz, Christiane
    Corrion, Andrea L.
    Recht, Felix
    Suh, Chang Soo
    Chu, Rongming
    Shen, Likun
    Speck, James S.
    Mishra, Umesh K.
    IEEE ELECTRON DEVICE LETTERS, 2007, 28 (11) : 945 - 947
  • [6] X- and Ka-band power performance of AlGaN/GaN HEMTs grown by ammonia-MBE
    Pei, Y.
    Poblenz, C.
    Corrion, A. L.
    Chu, R.
    Shen, L.
    Speck, J. S.
    Mishra, U. K.
    ELECTRONICS LETTERS, 2008, 44 (09) : 598 - +
  • [7] Effect of gate length on DC performance of AlGaN/GaN HEMTs grown by MBE
    Johnson, JW
    Baca, AG
    Briggs, RD
    Shul, RJ
    Wendt, JR
    Monier, C
    Ren, F
    Pearton, SJ
    Dabiran, AM
    Wowchack, AM
    Polley, CJ
    Chow, PP
    SOLID-STATE ELECTRONICS, 2001, 45 (12) : 1979 - 1985
  • [8] Microwave power performance of MBE-grown AlGaN/GaN HEMTs on HVPE GaN substrates
    Storm, D. F.
    Roussos, J. A.
    Katzer, D. S.
    Mittereder, J. A.
    Bass, R.
    Binari, S. C.
    Hanser, D.
    Preble, E. A.
    Evans, K.
    ELECTRONICS LETTERS, 2006, 42 (11) : 663 - 665
  • [9] Structural and electrical properties of AlGaN/GaN HEMTs grown by MBE on SiC, Si(111) and GaN templates
    Cordier, Y
    Hugues, M
    Semond, F
    Natali, F
    Lorenzini, P
    Bougrioua, Z
    Massies, J
    Frayssinet, E
    Beaumont, B
    Gibart, P
    Faurie, JP
    JOURNAL OF CRYSTAL GROWTH, 2005, 278 (1-4) : 383 - 386
  • [10] Growth of AlGaN/GaN HEMTs on Silicon Substrates by MBE
    Semond, Fabrice
    Cordier, Yvon
    Natali, Franck
    Le Louarn, Arnaud
    Vezian, Stephane
    Joblot, Sylvain
    Chenot, Sebastien
    Baron, Nicolas
    Frayssinet, Eric
    Moreno, Jean-Christophe
    Massies, Jean
    ADVANCES IN GAN, GAAS, SIC AND RELATED ALLOYS ON SILICON SUBSTRATES, 2008, 1068 : 51 - 56
12345