The polycrystalline sample of bismuth based-complex multiferroic of a composition Bi0.5Pb0.5Fe0.5Ce0.5O3 was prepared by a high-temperature solid-state reaction technique (calcinations temperature = 900 °C, sintering temperature = 960 °C, time = 4 h). Preliminary structural analysis using XRD data exhibits the formation of a single-phase compound. Studies of surface morphology of the ceramic sample of the compound, recorded at room temperature using a scanning electron microscope, show uniform distribution of grains of different size with few voids. Detailed studies of dielectric properties (εr, tan δ) supported the existence of multiferroic properties in the above complex system. The analysis of impedance parameters, recorded in a wide frequency (1 kHz–1 MHz) and temperature (room temperature to 450 °C) range of the material provide better understanding of (a) role of grains and grain boundaries in resistive and capacitative characteristics, (c) structure-properties relationship and (b) type of relaxation process occurred in the material. Study of temperature dependence of dc conductivity of the compound shows the existence of negative temperature coefficient of resistance in it. The nature of variation of ac conductivity with temperature of the material follows the Josher’s universal power law. Study of magneto-electric characteristics of the sample at room temperature has provided many useful and new data on magneto-electric coupling coefficient of different orders.
机构:
Al Cuza Univ 1, Dept Solid State & Theor Phys, Bv Carol I 11, Iasi 700506, RomaniaAl Cuza Univ 1, Dept Solid State & Theor Phys, Bv Carol I 11, Iasi 700506, Romania
Mitoserlu, Liliana
Buscaglia, Vincenzo
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机构:Al Cuza Univ 1, Dept Solid State & Theor Phys, Bv Carol I 11, Iasi 700506, Romania
Buscaglia, Vincenzo
Pallecchi, Ilaria
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机构:Al Cuza Univ 1, Dept Solid State & Theor Phys, Bv Carol I 11, Iasi 700506, Romania
Pallecchi, Ilaria
Nanni, Paolo
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机构:Al Cuza Univ 1, Dept Solid State & Theor Phys, Bv Carol I 11, Iasi 700506, Romania
机构:Tianjin University of Technology,School of Electronic and Information Engineering, Tianjin Key Laboratory of Film Electronic and Communication Devices
Yemei Han
Lingxia Li
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机构:Tianjin University of Technology,School of Electronic and Information Engineering, Tianjin Key Laboratory of Film Electronic and Communication Devices
Lingxia Li
Fang Wang
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机构:Tianjin University of Technology,School of Electronic and Information Engineering, Tianjin Key Laboratory of Film Electronic and Communication Devices
Fang Wang
Yujie Yuan
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h-index: 0
机构:Tianjin University of Technology,School of Electronic and Information Engineering, Tianjin Key Laboratory of Film Electronic and Communication Devices
Yujie Yuan
Yinping Miao
论文数: 0引用数: 0
h-index: 0
机构:Tianjin University of Technology,School of Electronic and Information Engineering, Tianjin Key Laboratory of Film Electronic and Communication Devices
Yinping Miao
Jinshi Zhao
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机构:Tianjin University of Technology,School of Electronic and Information Engineering, Tianjin Key Laboratory of Film Electronic and Communication Devices
Jinshi Zhao
Kailiang Zhang
论文数: 0引用数: 0
h-index: 0
机构:Tianjin University of Technology,School of Electronic and Information Engineering, Tianjin Key Laboratory of Film Electronic and Communication Devices
Kailiang Zhang
Journal of Materials Science: Materials in Electronics,
2015,
26
: 8261
-
8266
机构:
Al Cuza Univ 1, Dept Solid State & Theor Phys, Bv Carol I 11, Iasi 700506, RomaniaAl Cuza Univ 1, Dept Solid State & Theor Phys, Bv Carol I 11, Iasi 700506, Romania
Mitoserlu, Liliana
Buscaglia, Vincenzo
论文数: 0引用数: 0
h-index: 0
机构:Al Cuza Univ 1, Dept Solid State & Theor Phys, Bv Carol I 11, Iasi 700506, Romania
Buscaglia, Vincenzo
Pallecchi, Ilaria
论文数: 0引用数: 0
h-index: 0
机构:Al Cuza Univ 1, Dept Solid State & Theor Phys, Bv Carol I 11, Iasi 700506, Romania
Pallecchi, Ilaria
Nanni, Paolo
论文数: 0引用数: 0
h-index: 0
机构:Al Cuza Univ 1, Dept Solid State & Theor Phys, Bv Carol I 11, Iasi 700506, Romania
机构:Tianjin University of Technology,School of Electronic and Information Engineering, Tianjin Key Laboratory of Film Electronic and Communication Devices
Yemei Han
Lingxia Li
论文数: 0引用数: 0
h-index: 0
机构:Tianjin University of Technology,School of Electronic and Information Engineering, Tianjin Key Laboratory of Film Electronic and Communication Devices
Lingxia Li
Fang Wang
论文数: 0引用数: 0
h-index: 0
机构:Tianjin University of Technology,School of Electronic and Information Engineering, Tianjin Key Laboratory of Film Electronic and Communication Devices
Fang Wang
Yujie Yuan
论文数: 0引用数: 0
h-index: 0
机构:Tianjin University of Technology,School of Electronic and Information Engineering, Tianjin Key Laboratory of Film Electronic and Communication Devices
Yujie Yuan
Yinping Miao
论文数: 0引用数: 0
h-index: 0
机构:Tianjin University of Technology,School of Electronic and Information Engineering, Tianjin Key Laboratory of Film Electronic and Communication Devices
Yinping Miao
Jinshi Zhao
论文数: 0引用数: 0
h-index: 0
机构:Tianjin University of Technology,School of Electronic and Information Engineering, Tianjin Key Laboratory of Film Electronic and Communication Devices
Jinshi Zhao
Kailiang Zhang
论文数: 0引用数: 0
h-index: 0
机构:Tianjin University of Technology,School of Electronic and Information Engineering, Tianjin Key Laboratory of Film Electronic and Communication Devices
Kailiang Zhang
Journal of Materials Science: Materials in Electronics,
2015,
26
: 8261
-
8266