Hillock and Whisker Growth on Sn and SnCu Electrodeposits on a Substrate Not Forming Interfacial Intermetallic Compounds

被引:0
|
作者
M.E. Williams
K.-W. Moon
W.J. Boettinger
D. Josell
A.D. Deal
机构
[1] NIST,Metallurgy Division
[2] Lehigh University,Department of Materials Science & Engineering
来源
Journal of Electronic Materials | 2007年 / 36卷
关键词
Interfacial intermetallic compound (IMC); tin whiskers; focused ion beam (FIB);
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中图分类号
学科分类号
摘要
Intermetallic compound (IMC) formation at the interface between the tin (Sn) plating and the copper (Cu) substrate of electronic components has been thought to produce compressive stress in Sn electrodeposits and cause the growth of Sn whiskers. To determine if interfacial IMC is a requirement for whisker growth, bright Sn and a Sn-Cu alloy were electroplated on a tungsten (W) substrate that does not form interfacial IMC with the Sn or Cu. At room temperature, conical Sn hillocks grew on the pure Sn deposits and Sn whiskers grew from the Sn-Cu alloy electrodeposits. These results demonstrate that interfacial IMC is not required for initial whisker growth.
引用
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页码:214 / 219
页数:5
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